The multiple-state storage capability of phase change memory (PCM) is confirmed by using stacked chalcogenide films as the storage medium. The current–voltage characteristics and the resistance–current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si–Sb–Te layers triggered by different amplitude currents.
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Yun-Feng et al. (2006) studied this question.
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