Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
March 1, 1991Journal of Applied Physics

Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memory

View Full Paper
Ask AI
Bookmark
Share

Authors

NYNoboru YamadaNagaoka University of TechnologyEOEiji OhnoAlmeida Memorial HospitalKNKenichi NishiuchiPanasonic (Japan)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Yamada et al. (1991) studied this question.

synapsesocial.com/papers/6a23969f96b50e6ae79eeb3bhttps://doi.org/10.1063/1.348620
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1RAPID REVERSIBLE LIGHT-INDUCED CRYSTALLIZATION OF AMORPHOUS SEMICONDUCTORS1971 · 467 citations
  2. 2Compound materials for reversible, phase-change optical data storage1986 · 376 citations
  3. 3The extent of crystallization resulting from submicrosecond optical pulses on Te-based memory materials1973 · 22 citations
  4. 4Laser writing and erasing on chalcogenide films1972 · 81 citations
  5. 5Laser-beam writing on amorphous chalcogenide films: crystallization kinetics and analysis of amorphizing energy1973 · 68 citations