The influence of top electrode material on the resistive switching properties of ZrO 2 -based memory film using Pt as a bottom electrode was investigated in this letter. In comparison with Pt/ZrO 2 /Pt and Al/ZrO 2 /Pt devices, the Ti/ZrO 2 /Pt device exhibits different resistive switching current-voltage (I- V) curve, which can be traced and reproduced by a dc voltage more than 1000 times only showing a little decrease of resistance ratio between high and low resistance states. Furthermore, the broad dispersions of resistive switching characteristics in the Pt/ZrO 2 /Pt and Al/ZrO 2 /Pt devices are generally observed during successive resistive switching, but those dispersions are suppressed by the device using Ti as a top electrode. The reliability results, such as cycling endurance and continuous readout test, are also presented. The write-read-erase-read operations can be over 10 4 cycles without degradation. No data loss is found upon successive readout after performing various endurance cycles
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Lin et al. (2007) studied this question.
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