Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
June 30, 2014Nano Letters

Electrical Characteristics of Multilayer MoS2 FET’s with MoS2/Graphene Heterojunction Contacts

View Full Paper
Ask AI
Bookmark
Share

Authors

JKJoon Young KwakEwha Womans UniversityJHJeonghyun HwangSangmyung UniversityBCBrian CalderonCornell University

Discussion

Loading...

Member takes

Implication

Randomized trial investigates electrical characteristics of MoS2/graphene transistors, suggesting novel insights into charge transport mechanisms.

Key Points

  • This research aims to examine the electrical properties of multilayer MoS2/graphene heterojunction transistors and the underlying mechanisms governing charge transport.
  • Conducted temperature-dependent I-V measurements on multilayer MoS2/graphene heterojunction transistors.
  • Measured donor concentrations and Schottky barrier heights across different interfaces under varying conditions.
  • Analyzed charge transport mechanisms as a function of bias voltage and temperature.
  • Identified unintentional donor concentration of 3.57 × 10(11) cm(-2) and ionized donor concentration of 3.61 × 10(10) cm(-2).
  • Determined barrier heights of 0.23 eV at graphene/MoS2 interface and 0.40 eV at Ti/MoS2 interface, indicating higher values than previously reported.
  • Charge transport mechanisms vary between thermionic-field emission and field emission depending on conditions.

Cite This Study

Kwak et al. (2014) studied this question.

synapsesocial.com/papers/6a221e7a00d082f62f970d54https://doi.org/10.1021/nl5015316
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Gate tunable graphene-silicon Ohmic/Schottky contacts2012 · 42 citations
  2. 2Charge trapping in alumina and its impact on the operation of metal-alumina-nitride-oxide-silicon memories: Experiments and simulations2011 · 26 citations
  3. 3Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier2012 · 960 citations
  4. 4High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector2013 · 153 citations
  5. 5From Bulk to Monolayer MoS 2 : Evolution of Raman Scattering2012 · 4,265 citations