For the first time, a high performance, low leakage Schottky barrier diode (SBD) with cutoff frequency above 1.0 THz in a 130nm SiGe BiCMOS technology for millimeter-wave application is described. Device optimization has been evaluated by varying critical process and layout parameters such as, anode size, cathode depth, cathode resistivity, junction tailoring, and guardring optimization is investigated
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Rassel et al. (2006) studied this question.
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