Magnetron sputtering of transparent conductive zinc oxide: relation between the sputtering parameters and the electronic properties

Magnetron sputtering of transparent conductive oxides zinc oxide, indium tin oxide, tin oxide is a promising technique which allows the deposition of films at low temperatures with good optical and electronic properties. A special advantage is the scalability to large areas. The principles underlying magnetron sputtering are reviewed in this paper. The growth process during magnetron sputtering is characterized by the bombardment of the growing film with species from the sputtering target and from the plasma. In addition to sputtered atoms with energies in the eV range, ions from the plasma mostly argon and neutral atoms also argon reflected at the target hit the growing film. Depending on the energy of these species and on the ion to neutral ratio the properties of the films vary. High energies greater than or equal to 100 eV , which occur mainly at low sputtering pressures lead to damage of the growing film, connected with mechanical stress, small crystallites and bad electrical parameters. Ion assisted growth with low ion energies below about 50 eV is advantageous as is a high ion to neutral ratio. A compilation of resistivities of magnetron sputtered zinc oxide films yields a limiting resistivity of 2 x 10 4 Ohm cm for polycrystalline films. Based on the correlation between plasma parameters and film properties new research fields are anticipated