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The observation of far-infrared stimulated emission from shallow donor transitions in silicon is reported. Lasing with a wavelength of 59 due to the neutral donor intracenter 2p₀1s (E) transition in Si: P pumped by CO₂ laser radiation is obtained. Populations of D^0 and D^- center states and the balance of the radiation absorption and amplification are theoretically analyzed.
Павлов et al. (Mon,) studied this question.