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The observation of far-infrared stimulated emission from shallow donor transitions in silicon is reported. Lasing with a wavelength of 59μm due to the neutral donor intracenter 2p₀→1s(E) transition in Si:P pumped by CO₂ laser radiation is obtained. Populations of D⁰ and D^- center states and the balance of the radiation absorption and amplification are theoretically analyzed.
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Павлов et al. (2000) studied this question.
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