Dielectric suppression of nanosolid silicon

doi:10.1088/0957-4484/15/12/019 An analytical solution is presented showing that the dielectric susceptibility of a nanosolid depends functionally on the crystal binding that determines the bandgap and hence the essential processes of electron polarization, and on the electron–phonon coupling, that is often overlooked in theory considerations. The derived solution covers all the measured values of bandgap expansion that are beyond the reach of available approaches. Consistency between predictions and impedance measurements evidences the impact of atomic coordination-number imperfection on the dielectric performance of nanometric semiconductors and the validity of the given solution. 1.