Useful and accessible organometallic precursors for preparation of zinc sulfide and indium sulfide thin films via solution pyrolysis (printing) method

Polycrystalline β‐zinc sulfide thin films were prepared by solution pyrolysis of an ethylzinc isopropylthiolate–zinc bis(dibutyldithiocarbamate) combined precursor (EtZnSiPr–Zn(S 2 CNnBu 2 ) 2 ) in chloroform solution on glass or silicon(111) substrates at 300°C. Homogeneous but amorphous indium sulfide thin films were obtained from butylindium bis(isopropylthiolate) (nBuInSiPr 2 ) in P ‐xylene on these substrates at 300°C similarly. The sulfide thin films obtained were characterized by means of X‐ray photoelectron spectroscopy (XPS), X‐ray fluorescence Microanalysis, scanning electron microscopy (SEM) and optical band gap measurements.