A simple one-dimensional model of an oxide film on the surface of a semiconductor is used to calculate the surface-state energy as a function of the film width. As this width increases above a critical value, the surface state disappears from the semiconducting gap. Application is made to the Si-SiO₂ system, and a semiquantitative estimate of the critical width is given.
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Ynduráin et al. (1971) studied this question.
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