DNA Interlayers Enhance Charge Injection in Organic Field‐Effect Transistors

By inserting DNA interlayers beneath the Au contact, the contact resistance of PC70BM field-effect transistorss is reduced by approximately 30 times at a gate bias of 20 V. The electron and hole mobilities of ambipolar diketopyrrolopyrrole transistors are increased by one order of magnitude with a reduction of the threshold voltage from 12 to 6.5 V. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.