Octahedral shaped single crystalline undoped and Ga-doped indium oxide nano-and microcrystals were fabricated using vapor-solid growth process. Effects of Ga doping on the crystallinity, defect structure, and optical properties of the nano-/microstructures have been studied using scanning electron microscopy, microRaman spectroscopy, transmission electron microscopy and cathodoluminescence spectroscopy. It has been observed that incorporation of Ga does not affect the morphology of <TEX>In₂O₃</TEX> structures due to its smaller ionic radius, and similar oxidation state as that of In. However, incorporation of Ga in high concentration (~3.31 atom %) causes lattice compression, reduces optical band gap and defect induced CL emissions of <TEX>In₂O₃</TEX> nano-/microcrystals. The single crystalline Ga-doped, <TEX>In₂O₃</TEX> nano-/microcrystals with low defect contents are promising for optoelectronic applications.
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Sánchez et al. (2015) studied this question.
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