Single-crystalline gallium-doped indium oxide nanowires

High-density gallium (Ga)-doped indium oxide (In2O3) nanowires whose Ga content [Ga∕(In+Ga) atomic ratio] is 0%, 7%, and 45%, were synthesized by thermal evaporation. They have an average diameter of 50nm and consist of nearly single-crystalline cubic In2O3 structure with the [010] growth direction. High-resolution x-ray diffraction analysis reveals that as the Ga content increases the position of In2O3 peaks shifts to the higher angle and a crystalline form (Ga,In)2O3 is produced. We estimated a 0.4% reduction of the lattice constant for 45% Ga-doped nanowires.