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The band discontinuity has been determined for a GaAs/AlGaAs heterojunction prepared by molecular beam epitaxy. The conduction band-discontinuity ΔEc and the valence-band discontinuity ΔEv were independently obtained by the C-V profiling technique, taking into account a correction for the interface charge density. The simulation was employed to confirm the reliability of the obtained band discontinuity. The ΔEc dependence on both the Al composition of the AlGaAs layer and the heterojunction structure (AlGaAs on GaAs, or GaAs on AlGaAs) was examined. We found that ΔEc and ΔEv were determined to be 62 and 38% of the band-gap discontinuity ΔEg, being independent of the structure.
Watanabe et al. (Sat,) studied this question.