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A facile strategy to grow nitrogen-doped graphene using embedded nitrogen and carbon in metal substrate via a segregation method is reported. As doping is concurrently carried out in the segregation process of the carbon species, N atoms can be substitutionally doped into the graphene lattice. This approach allows precise control of the doping degree and location, which enables growing various heterojunctions at the desired location.
Zhang et al. (Fri,) studied this question.