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Undoped and Se-doped Ga0.51In0.49P/GaAs single heterojunctions grown by metalorganic vapor-phase epitaxy (MOVPE) are characterized with deep-level transient spectroscopy and transmission electron microscopy (TEM). The undoped MOVPE material, grown at 710 °C, is characterized by a deep electron trap with an activation energy that takes values in the range 700–900 meV. Se doping suppresses the formation of this trap when the doping level is higher than 5×1017 cm−3. Furthermore, Se doping suppresses the persistent photoconductivity that is observed in the undoped samples. Finally, analysis with cross-section TEM reveals that the samples undergo partial spinodal decomposition in a direction nearly vertical to the interface.
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Paloura et al. (1992) studied this question.
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