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February 15, 1982Applied Physics Letters

Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donors

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Authors

JŁJ. ŁagowskiInstitut Mines-TélécomHGH. C. GatosDuPont (United States)JPJ. M. ParseyPhoenix Analysis and Design Technologies (United States)

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Łagowski et al. (1982) studied this question.

synapsesocial.com/papers/6a86b18537e82e140d153db8https://doi.org/10.1063/1.93092
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Also Consider

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  1. 1Effects of the Growth Conditions on Deep Level Concentration in MOCVD GaAs1981 · 40 citations
  2. 2Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type Semiconductors1975 · 217 citations
  3. 3Direct evidence for the nonassignment to oxygen of the main electron trap in GaAs1979 · 114 citations