Main Electron Traps in In1-xGaxP (0.12≤ x ≤ 0.96)

Deep level transient spectroscopy (DLTS) measurement has been made on solution-grown Te-doped In 1- x Ga x P alloys with 0.12 ≤ x ≤0.96. Three main electron traps, SGE1, SGE2 and SGE3, were detected. Their activation energy of carrier emission, E T , were about 0.17, 0.40 and 0.45∼0.60 eV, respectively. SGE1 was detected in samples with x 0.83, SGE2 in samples with x 0.56 and SGE3 was detected in all samples examined. The peak of the DLTS spectrum of SGE2 moves to lower temperatures as the filling pulse width, t p , is increased; and E T derived from the Arrhenius plot depends on t p .