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A negative magnetoresistance proportional to B^2 is found in the two-dimensional electron gas of GaAs-AlₗGa₁-ₗAs heterostructures. It is explained by the conductivity correction due to the electron interaction effect in disordered two-dimensional systems. The high-field electron lifetime, estimated both from the interaction effect and from the Shubnikov-de Haas oscillations, is much shorter than the zero-field lifetime, demonstrating the predominance of long-range potential fluctuations in high-mobility GaAs-AlₗGa₁-ₗAs samples.
Paalanen et al. (Mon,) studied this question.