We report on the development of the first widely tunable semiconductor laser with an integrated electroabsorption modulator. The laser is a four-section buried-ridge sampled-grating distributed Bragg reflector design. It has a 41-nm continuous tuning range with a maximum tuning current of 23.5 mA for the hack mirror and 21 mA for the front mirror. The modulator is based on a 0.87-eV bandgap bulk waveguide structure. It is capable of producing more than 22 dB of optical extinction over the entire tuning range of the laser with a -4.0-V bias.
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Mason et al. (1999) studied this question.
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