Onset of in-plane ferroelectricity in the vanadium dioxide (VO ₂ ) Mott insulator for inmemory computing applications

We present experimental results on VO2, which is the most utilized Mott material, grown by atomic layer deposition on single-crystalline Si (100) (VO2/Si) wafers and followed by thermal treatment at 500 o C for different times: 30, 60 and 90 minutes. All these structures have shown in-plane ferroelectricity, the best results being obtained for VO2 treated thermically at 500 o C during 60 minutes. The remanent polarization in this case is 100 C/cm 2 at room temperature at coercive voltages  10 V. Current-voltage and polarization-voltage dependences at various temperatures have shown that VO2 has a reversible insulator-metal transition at 66 o C.