Innovative technique enables real-time temperature mapping in semiconductor devices, suggesting broad diagnostic applications.
centers are quantum sensors capable of measuring temperature, magnetic, and electric fields at the nanoscale. These measurements are crucial for the design and evaluation of next-generation semiconductor devices. An innovative technique, termed FND-based lock-in photoluminescence thermography, has been developed to enable wide-field, real-time temperature mapping of actively operating devices such as bipolar junction transistors and field-effect transistors. The method achieves nanometer-scale spatial resolution and millisecond temporal resolution, yielding valuable insights into heat generation and dissipation processes in operando semiconductor devices.In summary, NV centers in FNDs constitute robust platforms for quantum sensing and metrology across a broad range of domains. From enhancing the sensitivity of immunodiagnostics to advancing EUV imaging and improving semiconductor thermal analysis, these quantum defects serve as transformative tools at the intersection of materials chemistry, biomedicine, and quantum technologies.
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Huan-Cheng Chang (2026) studied this question.
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