A compact memristive quantum FET (memQFET) model with Landauer transport and WKB tunneling for circuit-level simulation

This paper introduces a physics-based compact model of a three-terminal memristive quantum field-effect transistor (memQFET), which can be used for circuit-level simulation. A memory state is incorporated into the model within the Landauer transport formulation. The current is calculated through the Landauer energy integral, while the transmission probability is obtained using the Wentzel–Kramers–Brillouin (WKB) approximation of a localized barrier affected by the state variable. When the drain terminal is excited by a bipolar voltage, the time-varying memory state ( w ( t )) modulates the barrier height, resulting in the formation of pinched hysteresis loops (PHLs) in the current–voltage characteristics without the need for additional window functions or corrective terms. The model also allows observation of the internal state while preserving proper three-terminal device operation. The model has been implemented in the SPICE environment.