Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate

Abstract A series of AlN/GaN heterostructures were grown on 150 mm Si substrates by metal organic chemical vapor deposition (MOCVD). Different cap layer structures, including gallium nitride (GaN) and silicon nitride (SiN x ), were used to passivate the heterostructure surface. A 3.5 nm thick SiN x cap is able to maintain the two dimensional electron gas (2DEG) stability in a long period. An AlN/GaN heterostructure with a 4.5 nm thick AlN barrier exhibits the best 2DEG properties, in terms of sheet resistance, carrier mobility and stability. The carrier mobility of the 2DEG can be enhanced by a combination of SiNx and GaN cap layers to over 1400 cm 2 /Vs.