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Two similar defects in silicon, resulting from doping with platinum in an atmosphere containing water vapor, were studied by means of electron paramagnetic resonance. Both spectra have effective electron spin S=1/2, and exhibit platinum- and hydrogen-related hyperfine structure and remarkable behavior under band-gap illumination. One of the centers has been identified with the recently reported Pt-H₂ complex. Ligand hyperfine interaction and values of electron localization on two silicon neighbors and two protons have been measured and found to support the model of the Pt-H₂ center. The second spectrum, labeled Si-NL53, is also reported here. This spectrum has trigonal symmetry and displays hyperfine interactions with three equivalent platinum nuclei. Spin-Hamiltonian parameters of the spectrum were determined and the microscopic model of the defect is proposed. It has been concluded that annealing at high temperature in water-vapor atmosphere provides a high concentration of hydrogen in the bulk silicon and that it can be trapped there forming stable complexes with platinum.
Höhne et al. (Sun,) studied this question.