Structure-sensitive spectroscopy of transition-metal-hydrogen complexes in silicon

Several centers that involve Pt and H have been introduced into n-type Si and studied by electron paramagnetic resonance and vibrational spectroscopy to provide unique structure-sensitive data for an H-passivated deep level impurity. Through the observation of Pt-H and -D hyperfine interactions, a new Pt-H₂ complex has been identified. This defect is still electrically active and its level has been located. Several vibrational bands due to Pt and H related centers were also found. H stretching bands at 1888.2 and 1889.5 cm^-1 are assigned to the different charge states of the Pt-H₂ defect.