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Review the electronic properties of transition-metal impurities and identify deep energy levels within the band gaps of common III-V semiconductor compounds.

July 10, 1985Journal of Physics C Solid State PhysicsOpen Access

Transition-metal impurities in III-V compounds

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Authors

BCB. ClerjaudCentre National de la Recherche Scientifique

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Implication

Literature review reveals deep energy levels of transition metals in III-V semiconductors, highlighting electronic properties across GaAs, InP, and GaP.

Key Points

Review the electronic properties of transition-metal impurities and identify deep energy levels within the band gaps of common III-V semiconductor compounds.
Surveyed experimental methods used to identify deep centers and evaluate energy levels in semiconductor band gaps.
Synthesized observational data on 3d iron-group substitutional impurities, impurity complexes, 4d, 5d, and rare earth elements in GaAs, InP, and GaP.
Cataloged established energy levels for isolated 3d iron-group substitutional impurities across GaAs, InP, and GaP host lattices.
Summarized the structural configurations and behavioral characteristics of complex defect centers, heavier 4d and 5d elements, and rare earth dopants.

Cite This Study

B. Clerjaud (1985) studied this question.

synapsesocial.com/papers/6a8c5004808303650eee226f https://doi.org/10.1088/0022-3719/18/19/005

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Implication

Literature review reveals deep energy levels of transition metals in III-V semiconductors, highlighting electronic properties across GaAs, InP, and GaP.

Transition-metal impurities in III-V compounds

Discussion

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Implication

Key Points

Cite This Study

Transition-metal impurities in III-V compounds

Discussion

Member takes

Implication

Key Points

Cite This Study

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