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In this work, we describe recent advances in InP HEMT and InP HBT technologies that have led to circuits approaching 1 THz. At lower frequencies, these technologies have demonstrated record performance in terms of noise figure (NF), output power, or power-added efficiency (PAE). On the other hand, CMOS-based technologies are dominating semiconductor industry, because they offer high complexity, yield, and integration density. Recent advances in heterogeneous integration enable the combination of compound semiconductor device technologies with CMOS to create complex, compact, and low weight future systems.
Radisic et al. (Fri,) studied this question.