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Supplementary notes detail methods and findings for enhancing graphene integration in neuroelectronic devices, suggesting effective strategies.
Supplementary Note 1: Materials and methods; experimental details for device morphological (Raman spectroscopy and AFM) and electrical characterization; Supplementary Note 2: Additional bibliographic review; reported CNP values for gSGFETs; Supplementary Note 3: Graphene charge carriers estimation by Raman spectroscopy; charge equilibrium at graphene interfaces; principle and Raman study in ionic solution; strength variation; Supplementary Note 4: Protection strategies review; device performance highlights for protective strategies; Supplementary Note 5: Cu protection additional characterization; Cu layer surface characterization by AFM and SEM; Cu etching evidence by XPS, CV and TOF-SIMS; Supplementary Note 6: Electrical characterization; comparison and CNP statistics for standard and Cu-protected fabricated macrotransistors
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Galceran et al. (2026) studied this question.
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