Demonstrates improved VSWR and power capacity in high-power RF termination, indicating better performance.
A high‐power RF/microwave termination incorporating cascaded π‐type attenuation networks, a multi‐segment microstrip structure and an electromagnetic constraint metal carrier is proposed. The design aims to improve the voltage standing wave ratio (VSWR), particularly at high frequencies, while enhancing power handling capability by mitigating local overheating. Theoretical analysis is conducted to determine the required characteristics of the attenuation network. Measurement results show that the proposed termination achieves a VSWR below 1.4 over the frequency range from DC to 43.5 GHz. Compared with existing designs, the proposed structure demonstrates improved bandwidth, lower VSWR and enhanced power handling capability.
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Y et al. (2026) studied this question.
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