Conduction Mechanism in Lead Sulfide Quantum Dot Gas Sensors

Colloidal quantum dots (CQDs) are ideal for room-temperature gas sensors due to their high surface area, abundant dangling bonds, and excellent film-forming properties. However, the underlying conduction mechanism remains unclear, lacking in-depth analysis of gas–solid charge transfer and carrier transport, which hinders the rational design of high-performance gas sensors. To address this, we fabricated a PbS colloidal quantum dot thin-film transistor (TFT) gas sensor that enables in situ analysis of carrier concentration and mobility via gate voltage modulation. We systematically measured the variations in conductivity, carrier concentration, and mobility with NO2 concentration and established a normalized weight variation model. The results show that the conductivity increase upon NO2 exposure is primarily due to the rise in carrier concentration induced by gas adsorption. At low concentrations (below 0.5 ppm), the response is dominated by mobility variation. This work provides a physically meaningful theoretical framework for understanding the conduction mechanism.