The electrical properties at the GaN(000)/AlGaN(0001) heterointerface have been investigated. Capacitance–voltage measurement and theoretical simulation results verify the existence of a two-dimensional (2D) hole gas, which is highly confined to the GaN/AlGaN interface with a peak carrier density of over 1019 cm-3. Hall-effect measurements in the 80–460 K temperature range reveal that the 2D hole gas has zero activation energy and positive sheet-resistance temperature coefficients.
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Nakajima et al. (2013) studied this question.
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