Dielectric Relaxation and Conduction Mechanisms in Se90Sn6Pb4 Chalcogenide Glass for Memory and Sensor Applications

This study investigates the dielectric relaxation and conduction mechanisms in Se90Sn6Pb4 chalcogenide glassy material, which is of interest for applications in phase-change memory devices, optical memory, and thermoelectric sensors. Despite previous studies on chalcogenide glasses, the conduction mechanisms at varying temperatures and the role of correlated barrier hopping (CBH) remain unclear. Using impedance spectroscopy in the frequency range 1 Hz–1 MHz at temperatures from 288 K to 318 K, the real (Z′) and imaginary (Z″) parts of the complex impedance were recorded. The sample was also characterized by X-ray diffraction (XRD) to confirm its glassy nature, and X-ray photoelectron spectroscopy (XPS) to determine the surface chemical composition and oxidation states of the elements. Peaks in Z″ at each temperature were used to evaluate the relaxation time τ, revealing thermally activated processes with an activation energy of 0.62 eV. Nyquist plots showed semicircular behavior with decreasing radii at higher temperatures, indicating enhanced d.c. conductivity with an activation energy of 0.63 eV. A.C. conductivity analysis demonstrated frequency-dependent behavior consistent with the CBH model, with hopping energy calculated as 0.32 eV. The dielectric loss increased with temperature and decreased with frequency, stabilizing above 250 Hz at 318 K. These findings provide new insights into the dielectric and conduction properties of Se90Sn6Pb4 glasses, supporting their optimization for practical electronic applications.