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Demonstrates enhanced online metrology in GaN devices, highlighting improved R&D efficiency.
For “3.5-generation” GaN with higher voltage density and steeper edges, existing benches lack composite stress orchestration (voltage–thermal–frequency–defect) aligned with real operating conditions. We present a cabinet-integrated, multi-channel DHTOL platform that supports 80 parallel DUTs with < 1 μs per-channel isolation for unattended batch runs. An FPGA-based online metrology chain (0.1 mV/0.01 A resolution, nanosecond capture) with adaptive steady-state windowing and drift compensation delivers online dynamic Rdson with error ≤3 mΩ. Low-parasitic fixtures (loop inductance ≤2 μH) and socket-level closed-loop thermal control (RT–150°C, ±1 °C) preserve high-voltage/high-frequency fidelity. Leveraging ion-migration testing know-how, we construct a composite stress matrix (voltage–thermal–frequency–defect–thermal management), standardize extraction protocols and quantify uncertainty, and define unified KPIs (dynamic Rdson drift, switching-time repeatability, thermal stability, cross-channel consistency, isolation latency). Prototype evaluation shows ≈60% batch-time reduction versus low-channel benches while maintaining fidelity and safety, enabling reproducible R&D screening and incoming inspection.
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Zhao et al. (2026) studied this question.
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