Donor Intra-Center Absorption to Resonant States in Quantum Wells: Analysis of Peak Shapes

The oscillator strengths of absorptive transitions from the ground to the resonant excited impurity states for the impurity positioned in and near the GaAs/AlGaAs rectangular quantum well are studied. Due to the resonant nature of the final states, the absorption peaks are broadened. The shape of the peaks is reproduced numerically as a function of impurity position with respect to the well and the well width. Peak parameters, such as maximum, broadening, and integral absorption, are analyzed numerically; the Fano parameter is considered qualitatively.