Demonstrates enhanced NIR emission in dual-valence phosphors, indicating potential for advanced applications.
Broadband near‐infrared (NIR) phosphors are essential for advanced applications ranging from night vision to biochemical sensing. However, conventional Cr 3+ ‐activated materials suffer from inherently low efficiency due to parity‐forbidden d‐d transitions. Here, we introduce a “dual‐valence distortion” strategy to overcome this fundamental limitation. By co‐substituting Sn 4+ in Li 2 SnO 3 :Cr 3+ with a size‐mismatched larger Sb 3+ and smaller Sb 5+ ions, we induce intense, controlled lattice distortion around the Cr 3+ sites. The tailored disruption of local symmetry relaxes the selection rules, enabling a remarkable 26‐fold enhancement in NIR emission intensity and a 6.4‐fold increase in quantum yield (QY). To achieve an ultra‐broadband emission, this highly efficient platform is synergistically coupled with a Cr 3+ → Yb 3+ energy transfer (ET) strategy. Yb 3+ co‐doping broadens the spectrum to a 336 nm bandwidth while maintaining high efficiency. Furthermore, the ET mechanism enhances thermal stability, demonstrating a “1+1>2” effect. The fabricated NIR phosphor‐converted LEDs enable advanced applications in non‐destructive testing, grain impurity detection, and a real‐time alcohol concentration monitoring system with threshold alarming. This work establishes a rational, chemistry‐driven framework for designing next‐generation ultra‐broadband NIR phosphors.
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Jia et al. (2026) studied this question.
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