Unconventional Room‐Temperature Antisymmetric Magnetoresistance in van der Waals Fe ₃ GaTe ₂ /Pt Heterostructures

(FGT) has emerged as a new frontier in spintronics, with particular interest paid to the antisymmetric magnetoresistance (AsMR) effect due to its potential to realize multi-state memory, promising for constructing energy-efficient memory devices. However, the mechanism underlying the room-temperature AsMR remains unresolved. Herein, a structural design of two completely isolated FGT nanoflakes, combined with measurement approaches using swapping electrodes and flipping device orientations, was used to clarify the physics of room-temperature AsMR in vdW ferromagnetic FGT-based systems. The results show the unambiguous presence of room-temperature AsMR with four distinct resistance states in the FGT/Pt Hall bar devices. Spin-momentum locking is identified in the vdW FGT-based heterostructures and found to be responsible for the observed room-temperature AsMR. The special design and magneto-electric transport measurements rule out the magnetic domain wall-induced circulating currents and interface pinning as possible origins of AsMR. Further confirmation of this physical mechanism is provided by the distinctive configuration of two FGT nanoflakes separated by a micrometer-scale gap. Overall, the physical mechanism of room-temperature AsMR in vdW FGT/Pt heterostructures is experimentally confirmed, opening new avenues for low-power room-temperature spintronic devices.