Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Hideaki Murotani, Daiki Akase, Koji Anai, Yoichi Yamada, Hideto Miyake, Kazumasa Hiramatsu; Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells. Appl. Phys. Lett. 23 July 2012; 101 (4): 042110. https://doi.org/10.1063/1.4739431 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search