Experimental insight into 3D domain walls in bismuth ferrite, suggesting new approaches for nanoelectronics.
]. These noncanonical 3D walls arise from oxygen-rearrangement-induced structural deviations and asymmetric Fe-O lattice coupling, which generate chiral polarization stabilized by a potent tripartite interaction between ferroelectric, shear, and spin degrees of freedom. This work provides a design principle for reconfigurable domain wall nanoelectronics.
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Liang et al. (2026) studied this question.
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