Material synthesis, device fabrication and evaluation of hysteresis response of two-dimensional material-based devices

January 1, 2026Open Access

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This research investigates the synthesis of molybdenum disulfide (MoS₂) and its effects on electronic properties in field-effect transistors (FETs).
Synthesis of planar and non-planar MoS₂ structures on Si/SiO₂ substrates using chemical vapor deposition.
Characterization of mechanical strains and electrical properties through XRD, Raman spectroscopy, and photoluminescence analysis.
Development of MoS₂ and graphene FETs and evaluation of their hysteresis behaviors.
MoS₂ FETs exhibited n-type behavior with mobilities between 0.05 and 18.6 cm² V⁻¹ s⁻¹ and a carrier concentration of 3.8×10¹² cm⁻².
Hysteresis in FETs correlates with back-gate voltage and channel dimensions; reduced hysteresis through high-k dielectric passivation was observed.
Graphene nanoribbons (GNR) showed varying hysteresis based on edge orientation, with armchair GNRs exhibiting stronger hysteresis compared to zigzag GNRs.

Evaluates hysteresis response in two-dimensional material-based devices, highlighting implications for electronic properties.

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Sobin Mathew (2026) studied this question.

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