Toward a CMOS-constrained MoS2-based platform for logic-in-memory

June 19, 2026Open Access

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Key Points

This work aims to develop a MoS2-based platform for improved logic-in-memory operations while addressing challenges related to energy consumption and integration density.
Systematic development of metrics linking device physics with computational performance.
Use of atmospheric CVD to fabricate large single-crystal MoS2 flakes on Si/SiO2.
Bias-resolved Raman and photoluminescence measurements to analyze nanoscale features and performance.
Demonstrated adjustable defect engineering leading to improved device characteristics and energy efficiency.
Achieved predictions for the Lorenz-63 system with a normalized root mean square error (NRMSE) of 0.089.
Defined optimal processing conditions for maximizing nonlinearity and memory depth in devices.

Explores a MoS2 platform achieving efficient logic-in-memory performance, suggesting breakthroughs in energy efficiency.

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Vladislav Kurtash (2026) studied this question.

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