CsPbBr ₃ /Cs ₄ PbBr ₆ @PbS-IGZO heterojunction integrated transistor for visible-light-responsive optoelectronic synapse applications

The separated sensing-processing architecture in conventional artificial vision systems leads to low energy efficiency and significant signal transmission delay, motivating the development of optoelectronic synaptic devices capable of co-integrating sensing, storage, and processing. Here, we report a visible-light-responsive optoelectronic synaptic transistor based on CsPbBr3/Cs4PbBr6@PbS nanocrystals integrated with an IGZO channel. Owing to the favorable visible-light absorption of the nanocrystals and the interfacial carrier modulation in the heterojunction, the device exhibits stable transistor characteristics, obvious photoresponse, and persistent photoconductivity under 532 nm illumination. Meanwhile, the photoinduced high-conductance state can be reversibly modulated by positive gate-voltage pulses, enabling optical writing and electrical erasing. On this basis, the fabricated device further demonstrates synaptic behaviors, including excitatory postsynaptic current, paired-pulse facilitation, spikerate-dependent plasticity, and learning-forgetting-relearning behavior. This work demonstrates the potential of heterostructured perovskite NCs as functional photosensitive components for constructing visible-light-responsive optoelectronic synaptic transistors, which provides a promising candidate for neuromorphic applications.