Two‐Dimensional Layered Oxides and the Two‐Dimensionalization of Bulk Oxides for Post‐Moore Information Devices

The continuous scaling of complementary metal–oxide–semiconductor technology has created an urgent demand for emerging materials that go beyond silicon. Two‐dimensional (2D) oxides have emerged as promising candidates for post‐Moore information devices, attributed to their outstanding structural stability, inherent compatibility with silicon‐based technology, and diverse functionalities encompassing semiconducting behavior, high‐ κ dielectric response, ferroelectricity, and magnetism. The two‐dimensionalization of nonlayered bulk oxides breaks the inherent limitation of strong three‐dimensional bonding, thereby greatly extending the material family of 2D oxides; this holds great scientific significance for exploring emergent physical properties and device applications. This review systematically presents the classification, synthesis strategies, fundamental physical properties, and device applications of both 2D layered and nonlayered oxides. We highlight key progress in transistors, gate dielectrics, optoelectronic components, as well as 2D ferroelectric and magnetic systems. Finally, we discuss the current challenges pertaining to scalable fabrication, interface engineering, and complementary integration, and offer perspectives on future pathways toward industrial translation and practical electronic applications.