Optimization of Plasmon-Enhanced Multilayer Antireflection Coatings for Broadband Light Trapping in Crystalline Silicon Solar Cells

This study presents an optimized plasmon-dielectric antireflection structure to enhance the light-trapping performance of crystalline silicon (c-Si) solar cells. The theoretical model combining the transfer matrix method and Maxwell-Garnett (MG) effective medium theory was employed to simultaneously optimize the thicknesses of TiO2/SiO2 layers and the volume fraction of silver nanoparticles (Ag NPs) to maximize the carrier generation rate (G). This study theoretically predicts the total carrier generation rate ( G_total ) = 1.9345 × 1023 m–1 s–1. Experimentally, Ag NPs were fabricated via electron beam evaporation followed by heat treatment. Ag NPs formed by annealing a 6 nm Ag film at 260°C for 50 min exhibited a size of 101 ± 32 nm and a coverage rate of ~31.5%, with an average reflectance (Ravg) of 8.63 ± 0.52%. The antireflection coating structure incorporating these Ag NPs demonstrated reduced reflectance (R) over a broad wavelength range and significant absorption enhancement in the ultraviolet-visible regions (200–340, 450–550 nm).