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This research aims to examine how hydrogen dilution during PECVD affects the quality of a-SiNx:H films and the performance of related nc-Si:H TFTs.

Hydrogen Dilution in PECVD Growth of a-SiNx:H Films: Influence on Cr- and Al-gated nc-Si:H TFTs

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This research aims to examine how hydrogen dilution during PECVD affects the quality of a-SiNx:H films and the performance of related nc-Si:H TFTs.
Deposition of a-SiNx:H films with varying H2 flow rates using PECVD
Characterization of films via SEM, FTIR (ATR and transmittance), electrical measurements, and stress analysis
Assessment of device performance comparing Al-gated TFTs with and without H2 dilution in dielectrics.
Hydrogen dilution enhanced film resistivity and reduced surface roughness (exact values not specified)
Devices with H2-diluted dielectrics exhibited higher mobility and lower threshold voltage
Significant discrepancies observed in FTIR analysis between ATR and transmittance modes, indicating substrate-dependent behavior.

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Randomized trial investigates hydrogen dilution effects on device performance in nanocrystalline silicon, suggesting improved performance metrics.

Anutgan et al. (2026) studied this question.

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Randomized trial investigates hydrogen dilution effects on device performance in nanocrystalline silicon, suggesting improved performance metrics.