Randomized trial examines electronic structure variations in Ge(S0.5Se0.5), indicating potential for tailored optoelectronic applications.
The electronic structure of Ge(S 0.5 Se 0.5 ) bridges those of GeS and GeSe, revealing composition-dependent band alignment in layered Ge(S x Se 1− x ) alloys.
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Sabik et al. (2026) studied this question.
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