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The study aims to understand the mechanisms of dislocation motion and its role in macroscopic plastic deformation in strained crystalline materials.

June 15, 2026Acta MaterialiaOpen Access

Stop-and-go dislocation dynamics in semiconductor heterostructures revealed by in-situ X-ray imaging

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In-situ analysis reveals stop-and-go dislocation motion in semiconductor heterostructures, suggesting new insights into material plasticity.

The study aims to understand the mechanisms of dislocation motion and its role in macroscopic plastic deformation in strained crystalline materials.
Tracked dislocation propagation using in-situ dark-field X-ray diffraction microscopy.
Achieved ∼100 nm spatial resolution and second-scale temporal resolution over a ∼200 × 200 μm² field of view.
Conducted statistical analysis of hundreds of dislocation propagation events.
Dislocations exhibit intermittent motion with a broad distribution of stopping times instead of continuous gliding.
The activity of dislocations shows a progressive loss at fixed temperatures, explained by a stochastic jump-process model.
The observed temporal hardening reflects a rare-event-driven nature of dislocation motion.

Kernke et al. (2026) studied this question.

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In-situ analysis reveals stop-and-go dislocation motion in semiconductor heterostructures, suggesting new insights into material plasticity.