A Zero‐Thermal Quenching Near‐Infrared La ₃ SbO ₇ :Nd ³⁺ Phosphor Based on High‐Symmetry Coordination Site

Thermal quenching remains a pivotal challenge that limits the further application of near‐infrared luminescent materials. Herein, we report a zero thermal quenching emission based on La 3 SbO 7 host with highly symmetric site for Nd 3+ ions. Under the excitation of 808 nm laser, the integrated emission intensity of La 3 SbO 7 :0.01Nd 3+ phosphor maintained 101% and 96% of the initial intensity at 473 and 513 K, respectively. The calculated temperature‐dependent luminescence decay lifetimes also maintain around 0.21 ms and show a trend of no decline as a function of temperature, demonstrating an extremely superior thermal stability. Besides, compared with Lu 3 SbO 7 structure and other activator ions, it can be found that thermal stability is closely connected with local structure characteristics and the process of energy transfer. Finally, by employing a 808 nm chip, the prepared near‐infrared phosphor‐converted light‐emitting diode presents great potential for night vision. This work provides a feasible idea for accelerating the discovery of NIR emitting oxide luminescent materials with excellent thermal stability.