Spatial and temporal effects upon deposition of particles onto thin films of silicon dioxide produced using high-energy deposition processes

The interaction of deposited atoms with a silicon dioxide film is simulated for the case of using high-energy processes for the deposition of optical nanocoatings. The method of molecular dynamics with a classical force field is used for describing the interaction between the atoms. The characteristic time of fast relaxation of the kinetic energy of the deposited atom and the characteristic depth of its penetration into the film are estimated. It is shown that the angular distribution of the velocities of the deposited atoms is significant for the formation of a coating.