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April 1, 1992IEEE Electron Device Letters

High-current-gain Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy

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Abstract

A Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor (HBT) grown on a

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Lu et al. (1992) studied this question.

synapsesocial.com/papers/6a322a328f44937f24a84fa2 https://doi.org/10.1109/55.145025

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling techniqueOriginal Research · 1987 · 196 citations
2Conduction- and valence-band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor depositionOriginal Research · 1990 · 145 citations
3High-gain GaInP/GaAs heterojunction phototransistor utilising guard-ring structureOriginal Research · 1989 · 7 citations
4Emitter size effect on current gain in fully self-aligned AlGaAs/GaAs HBT's with AlGaAs surface passivation layerOriginal Research · 1990 · 98 citations
5Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressureOriginal Research · 1991 · 112 citations